The optical quality of films was characterized by means of room-temperature photoluminescence measurements. These revealed a full-width at half-maximum of 0.046eV. The structural quality of the films was investigated by means of transmission electron microscopy. It was found that there were sub-micron grains that were free from threading dislocations and stacking faults.

Cubic-Phase GaN Light-Emitting Diodes. H.Yang, L.X.Zheng, J.B.Li, X.J.Wang, D.P.Xu, Y.T.Wang, X.W.Hu, P.D.Han: Applied Physics Letters, 1999, 74[17], 2498-500