Atomic structural investigations were made of {10•0} inversion domain boundaries in layers which had been grown by means of molecular beam epitaxy. A method which was based upon a comparison of the stacking sequences on each side of the boundary was proposed in order to distinguish between different models. Experimental evidence was found for 2 atomic configurations of the boundary plane. Depending upon the growth conditions, the Holt model could apply to the {10•0} inversion domain boundaries in GaN epitaxial layers.

Evidence for Multiple Atomic Structure for the {10¯10} Inversion Domain Boundaries in GaN Layers. V.Potin, G.Nouet, P.Ruterana: Applied Physics Letters, 1999, 74[7], 947-9