Hetero-epitaxial growth on GaP(111)B was demonstrated by using liquid-phase epitaxy. In order to prevent the generation of rotational twins, the initial saturation conditions of Ga-As solutions which contacted a GaP were investigated at 800C. The use of supersaturated and under-saturated solutions produced a number of twins in as-grown material. The use of saturated solutions produced only a few volume percent. It was concluded that near-equilibrium contact was effective in reducing the number of twins.

H.Udono, A.Motogaito, M.Kimura, A.Tanaka, T.Sukegawa: Journal of Crystal Growth, 1996, 169, 181-4