Direct-current conductivities, Hall effect and deep-level transient spectra were studied in crystals, with various concentrations of donors and acceptors, that contained a connected system of cell walls. A specific low-temperature conductivity which was related to the movement of holes along dislocations was observed in Ge crystals with donor and acceptor concentrations which ranged from 1012 to 1.6 x 1016/cm3. No similar conductivity was observed in Si crystals with donor and acceptor concentrations that were less than 2 x 1015/cm3. The conductivities of Ge with dislocation nets was similar to that in Ge bicrystals that were misoriented by between 10 and 15. A weak charge on the dislocation nets, and a pinning of the Fermi level near to the middle of the band gap in lightly doped Si, were correlated with the similar features of boundaries in Si bicrystals and polycrystals.

S.A.Shevchenko, A.I.Shalynin: Materials Science Forum, 1996, 207-209, 677-80