A new method was presented which permitted a reduction to be made in the mobility of dislocations, in GexSi1-x layers on Si, by applying a load which opposed the misfit stress in the layers. Results were given for layers with x-values of 0.016 or 0.022, and a layer thickness of between 0.42 and 0.9. It was found that it was not possible to suppress dislocation movement completely by using this method because other dislocation types could be activated by a stress configuration which reduced the driving stress that acted upon the main type of dislocation. The exact determination of the active dislocation type, and stress analyses that included the stress field of the indentation in addition to the above stress components, were also considered.

K.Jurkschat, S.G.Roberts: Philosophical Magazine Letters, 1996, 74[2], 67-71