A review was presented of the metalorganic molecular beam epitaxial growth of multi quantum wells. The combination of strain compensation with low-temperature growth increased the critical thickness to more than 100nm, and made it possible to grow multi quantum well structures with 25 wells. The characterization of misfit dislocations in the strain-relaxed wells, and the effect of dislocations upon threshold currents, was considered. The methods which were used to study the misfit dislocations that were generated in a strain-relaxed single layer, and in multi quantum wells, included cross-sectional transmission microscopy, plan-view transmission electron microscopy, cathodoluminescence, micro-photoluminescence and X-ray diffraction techniques. It was noted that micro-photoluminescence was more convenient than cathodoluminescence, since the former could be carried out in air.

H.Sugiura: Journal of Crystal Growth, 1996, 164, 434-41