The diffusion of Be from InGaAs epitaxial layers that had been grown between undoped InGaAs layers was investigated during post-growth annealing. A general substitutional-interstitial diffusion mechanism was developed in order to explain the concentration profiles which were observed. The possibility of a concentration-dependent diffusivity was also considered in order to improve the fit to Be diffusion profiles.

S.Koumetz, J.Marcon, K.Ketata, M.Ketata, F.Lefebvre, P.Martin, P.Launay: Materials Science and Engineering B, 1996, 37[1-3], 208-11