A new physical model was used in computer simulations in order to calculate dopant diffusion profiles. The model was based upon a system of reaction-diffusion equations which took account of all of the defects which were involved, and their interactions. Moreover, at high concentrations, the dominating effect of the limited dopant solubility was included. This made it possible to explain enhanced transient and steady-state dopant diffusion phenomena, and to calculate effective diffusion coefficients.

E.Antoncik: Materials Science and Engineering B, 1996, 37[1-3], 205-7