The effects of the annealing temperature, time and atmosphere upon the formation of donor centers in material which had been implanted with 1MeV Er ions to a dose of 1013/cm2 were studied. The observed dependences of the concentration of the donor centers, the activation coefficient, and the thickness of the n-layer, upon the annealing conditions indicated that, as well as Er atoms, the intrinsic point defects (which formed when the implanted layer was annealed at between 400 and 1200C) took part in the formation of donor centers.

O.V.Aleksandrov, N.A.Sobolev, E.I.Shek, A.V.Merkulov: Fizika i Tekhnika Poluprovodnikov, 1996, 30[5], 876-83 (Semiconductors, 1996, 30[5], 468-71)