An investigation was made of the effect of time-dependent changes in melt properties upon the formation of grown-in defects in single crystals that had been grown by using the Czochralski method. It was found that the density of grown-in defects increased if the crystal was pulled immediately after melting. The results indicated that the change in the state of melts could affect the formation of grown-in defects in Si monocrystals.

A.Ikari, K.Izunome, S.Kawanishi, S.Togawa, K.Terashima, S.Kimura: Journal of Crystal Growth, 1996, 167, 361-4