Atomic-resolution ultra-high vacuum scanning tunnelling microscopic studies were made of chemical vapor deposited epitaxial (100) films. It was found that, after growth, the surface of the epitaxial films was amorphous at the atomic scale. After 120s of exposure to atomic H at 30Torr, the surface consisted of amorphous regions and (2 x 1) dimer reconstructed regions. After 300s exposure to atomic H, the surface consisted mainly of (2 x 1) dimer reconstructed regions. These observations were compared with a new model for chemical vapor deposited diamond growth. Tunnelling current versus voltage spectroscopic studies were also made of undoped and B-doped epitaxial (100) films.

R.E.Stallcup, L.M.Villarreal, S.C.Lim, I.Akwani, A.F.Aviles, J.M.Perez: Journal of Vacuum Science and Technology B, 1996, 14[2], 929-32