The structure of the (111) surface of 3C-type material which had been prepared by the thermal reaction of C60 molecules with a (111) Si substrate was investigated by means of scanning tunnelling microscopy and high-resolution electron energy loss spectroscopy. Scanning tunnelling microscopy revealed 3 distinct surface reconstructions on SiC(111) surfaces, as the reaction temperature was varied from 800 to 1200C. The 2 x 2 and 2 x 3 reconstructions, which were observed after reaction below 900C, were considered to be a C cluster-covered surface. The 3 x 3 structure which was found after reaction at 1100C was suggested to be a Si-terminated 3C-SiC(111) surface. A transient 4 x 3 structure appeared at about 1000C during annealing. The diffusivity of Si atoms through the SiC film at various temperatures was suggested to be the main reason for the formation of the various surface reconstructions.

C.W.Hu, A.Kasuya, S.Suto, A.Wawro, Y.Nishina: Journal of Vacuum Science and Technology B, 1996, 14[2], 938-42