The 2-dimensional diffusion of Al that was implanted through a mask was measured after furnace annealing or rapid thermal annealing. The chemical staining of cross-sectioned samples was used to determine the vertical and lateral junction depths. The spreading resistance method was also used to measure the vertical profiles, while a new procedure was developed for the determination of the lateral diffusion profiles. Differences in the profiles which were measured by using the staining and spreading resistance methods were attributed to a spilling phenomenon that distorted the carrier concentration profile on bevelled samples.

G.Galvagno, F.La Via, M.G.Saggio, A.La Mantia, E.Rimini: Journal of the Electrochemical Society, 1995, 142[5], 1585-90