The diffusion of 300keV Al ions, which had been implanted to doses ranging from 1013 to 5 x 1015/cm2, was investigated in capped and uncapped material. The Al-based precipitates which formed when the Al concentration exceeded its solid solubility in Si were electrically inactive. Out-diffusion from uncapped samples reduced the Al dose which diffused into the Si substrate. In capped samples, Al segregation in the SiO2 layer occurred.

A.Scandurra, G.Galvagno, V.Raineri, F.Frisina, A.Torrisi: Journal of the Electrochemical Society, 1993, 140[7], 2057-62