The redistribution of Al and Si under the influence of irradiation at temperatures of up to 60C, after the formation of a p-n structure by the thermal diffusion of Al, was analyzed by assuming the operation of an interstitial mechanism. It was deduced that the main contribution to an increase in the reverse breakdown voltage, due to electron irradiation, arose from equalization of the inhomogeneity of the diffusant distribution at the p-n junction.

S.Makhkamov, J.V.Pakharukov, M.S.Yunusov: Fizika i Tekhnika Poluprovodnikov, 1989, 23[9], 1686-9 (Soviet Physics - Semiconductors, 1989, 23[9], 1042-3)