Migration into an underlying Si substrate, from CoSi2 layers which had been implanted with As ions, was studied by using a high-resolution carrier delineation technique. The junction shape was deeper near to the CoSi2 grain boundaries. By using 2-step annealing, or a thin silicide diffusion source, a laterally uniform junction was obtained with As-implanted CoSi2. The diffusion coefficients of As could be measured by using this technique. The activation energy for As diffusion (table 4) was 4.05eV.

F.La Via, C.Spinella, E.Rimini: Semiconductor Science and Technology, 1995, 10[10], 1362-7

Table 4

Diffusivity of As in Si