The co-diffusion of implanted As and P was investigated, after annealing at 900 or 1000C, for various dopant concentrations. The results did not reveal any direct interaction between the dopants. All of the observed anomalous effects of co-diffusion, as compared with diffusion of the elements by themselves, seemed to be explained by interactions between the dopants and the defects which were produced by ion implantation. It was observed that the presence of a high concentration of As atoms made annealing of the implantation damage more rapid, and strongly reduced P transient-enhanced diffusion.

S.Solmi, P.Maccagnani, R.Canteri: Journal of Applied Physics, 1993, 74[8], 5005-12