The diffusion of this element from polycrystalline material and into monocrystalline material during rapid optical annealing was investigated. The samples were characterized by using secondary ion mass spectrometry, transmission electron microscopy, and sheet resistance measurements. It was demonstrated that very shallow diffusion profiles in monocrystalline material could be formed by rapid optical annealing. By annealing (1050C, 5s), a junction depth of about 35nm was obtained.

H.J.Böhm, H.Wendt, H.Oppolzer, K.Masseli, R.Kassing: Journal of Applied Physics, 1987, 62[7], 2784-8