A secondary ion mass spectrometric analysis of diffusion across a TaSi2/Si interface and into monocrystalline or polycrystalline Si was carried out, together with an electrical characterization of the resultant structures. At temperatures ranging from 900 to 1000C, the dopant readily diffused into Si, without drastic segregation effects, when appropriate interface cleaning was used. In particular, very shallow diffusion regions were obtained in monocrystalline material beneath the implanted TaSi2; even at the relatively long annealing times that were sometimes needed for processing.

H.Gierisch, F.Neppl, E.Frenzel, P.Eichinger, K.Hieber: Journal of Vacuum Science and Technology B, 1987, 5[2], 508-14