The migration of As from implantation-doped polycrystalline Si films and into monocrystalline Si was investigated as a function of various process parameters. The effects of interface treatment before polycrystalline Si deposition, and of the Si grain size, were analyzed. Well-behaved diffusion sources were obtained only if epitaxial realignment of the polycrystalline Si film to the substrate was avoided and if no diffusion barrier was present at the polycrystalline/monocrystalline interface.

V.Probst, H.J.Böhm, H.Schaber, H.Oppolzer, I.Weitzel: Journal of the Electrochemical Society, 1988, 135[3], 671-6