The diffusion of As in Si-on-insulator structures, formed by O implantation, was studied. Although cross-sectional transmission electron microscopic analyses confirmed the high quality of the material, secondary ion mass spectroscopy and spreading resistance measurements revealed a pile-up phenomenon as well as an enhanced diffusivity of As in the Si over-layer. An explanation for these 2 observations was proposed, and the McNabb-Foster equations for diffusion with trapping were solved in order to simulate these effects.

N.Guillemot, P.Normand, D.Tsoukalas, P.Chenevier: Revue de Physique Appliquée, 1988, 23[8], 1369-73