The use of TiSi2 as a dopant diffusion source for As was studied. The TiSi2 layers were doped via ion implantation. Diffusion was carried out by using furnace and rapid thermal processing. Secondary ion mass spectrometry, scanning electron microscopy, and X-ray diffraction furnished clear evidence for compound formation between Ti and the two dopant species. This led to low dopant concentrations at the silicide/Si interface and to a very poor efficiency of the diffusion source.

V.Probst, H.Schaber, P.Lippens, L.Van den Hove, R.De Keersmaecker: Applied Physics Letters, 1988, 52[21], 1803-5