The migration of As in Si-on-insulator structures, which were formed by deep O implantation, was studied by using secondary ion mass spectrometry and spreading resistance methods. An enhanced diffusivity, and a pile-up phenomenon, were observed in thin Si layers.

P.Normand, D.Tsoukalas, N.Guillemot, P.Chenevier: Journal of Applied Physics, 1989, 66[8], 3585-9