Depth profiles were determined by using spreading resistance, Auger electron microscopy, and secondary ion mass spectrometry methods. These profiles showed that enhanced dopant diffusion and surface depletion resulted from rapid thermal treatments. It was found that Si interstitial injection from a N-supersaturated oxynitride interface facilitated the diffusion of As in the Si substrate. An appreciable amount of N was found below the Si surface, and this suggested that N interstitials might play an important role in the observed enhancement of the impurity diffusion.

J.Bustillo, C.Chang, S.Haddad, A.Wang: Applied Physics Letters, 1991, 58[17], 1872-4