The As ions were implanted into thin layers of WSi2 or CoSi2, on polycrystalline or monocrystalline Si, and were out-diffused into the substrate during furnace heating or rapid thermal annealing. Shallow (< 100nm) junctions were obtained by using rapid thermal annealing. The interface concentrations were close to the solid solubilities of the respective dopant; that is, more than 3 x 1020/cm3. It was found that dopant redistribution was determined by the lattice and grain-boundary diffusivities, solubility limits, layer inhomogeneities, dopant segregation at interfaces and grain boundaries. In addition, there was probably a phase transformation of the dopants which were segregated at the SiO2/silicide interface.

V.Probst, H.Schaber, A.Mitwalsky, H.Kabza, L.Van den Hove, K.Maex. Journal of Applied Physics, 1991, 70[2], 708-19