The behavior of the dopant during infra-red heating was investigated by using spin-on diffusion sources, repeated etching, and capacitance-voltage measurements. The diffusion coefficient was calculated by fitting the concentration profiles to the complementary error function. It was found that the diffusivity was enhanced during infra-red heating. This did not appear to be due to ion-implantation damage or rapid heating. The enhanced diffusivity was attributed to the generation of an excess of self-interstitials.

Y.Ishikawa, K.Yamauchi, I.Nakamichi: Japanese Journal of Applied Physics, 1989, 28[8], L1319-21