Ion implantation produces point defects, during annealing, which can significantly enhance dopant diffusion. This effect was studied for application to implant diffusion at low temperatures. Enhanced diffusion was detected below critical dopant concentrations. The latter concentrations depended only upon the temperature. This concentration corresponded to the As solid solubility.

R.B.Fair: Journal of the Electrochemical Society, 1990, 137[2], 667-71