The effect of the time and temperature of As diffusion from doped SiO2 films was studied. It was shown that, at temperatures ranging from 1370 to 1480K and times ranging from 0.5 to 8h, the SiO2 films were an essentially unlimited source of As.

J.D.Nisnevich: Izvestiya Akademii Nauk SSSR - Neorganicheskie Materialy, 1990, 26[4], 687-9 (Inorganic Materials, 1990, 26[4], 575-7)