It was found that, despite implantation away from the crystal orientation, the profile of 80keV As which had been implanted into (100) to a dose of 8 x 1015/cm2 had a long channelling tail. Enhanced diffusion of the implanted As was detected, in the early stages of annealing, by means of Hall effect and sheet resistivity measurements. The enhancement factor decayed with annealing time, and the time constant of the decay shortened with increasing temperature. The activation energy for the decay of the enhancement factor was equal to 1.2eV at temperatures of between 900 and 1000C, and was equal to 3.4eV at temperatures of between 1000 and 1100C. The maximum enhancement factor was 2.7, and occurred at the beginning of annealing.

Y.Sasaki, K.Itoh, S.Tanuma: Japanese Journal of Applied Physics, 1989, 28[8], 1421-5