The co-diffusion of As and P was studied by using a buried B layer. An analysis of the dopant profiles was performed by using secondary ion mass spectroscopy, spreading resistance profiles, and junction staining. It was found that the profiles of As and P, when diffused separately, were enhanced with respect to the co-diffused profiles. The buried B profile in the case of P alone was enhanced with respect to the B profile in the case of As and P co-diffusion. The annealing of residual implantation damage was suggested to be responsible for these effects. In addition, the suppression of the self-interstitial supersaturation under co-diffusive conditions was a transient effect and was suggested to be caused by an increase in the recombination of implantation-generated vacancies and self-interstitials due to the presence of a high concentration of As atoms.

R.Deaton, U.Gösele, P.Smith: Journal of Applied Physics, 1990, 67[4], 1793-800