The effect of the annealing ambient upon dopant diffusion was studied, during low-temperature processing by implanting As into (100) samples (at room temperature) through a 14nm SiO2 layer. The implantation dose and energy were sufficient to amorphize the surface. After low-temperature furnace annealing, the ion-implanted As exhibited a transient enhanced diffusion regime for both inert and oxidizing ambients. It had been expected that point defect generation during the annealing of implantation damage would predominate during the transient enhanced diffusion process; regardless of the nature of the ambient.

Y.Kim, H.Z.Massoud, R.B.Fair: Journal of the Electrochemical Society, 1990, 137[8], 2599-603