A study was made of the effects of implantation and annealing conditions upon As-implanted (100) material. It was found that an amorphous layer was created by implantation, and satisfactory recrystallization was achieved by annealing. Annealing at temperatures above 1000C caused appreciable spreading of the dopant profile, and piling-up of As near to the surface. Annealing at temperatures greater than 1100C resulted in As out-diffusion from the pile-up zone. This out-diffusion was suppressed by the use of a 90nm SiO2 cap. The diffusion of As was attributed to As4V- and As+Vo pairs.

G.Chaussemy, C.Gontrand, S.N.Kumar, B.Canut, D.Barbier, A.Laugier: Physica Status Solidi A, 1991, 124[1], 103-14