Samples which had been implanted with 310keV or 38MeV As ions, and annealed at 1200C, were studied by using electrochemical C-V measurements and secondary ion mass spectrometry. It was found that there was an optimum annealing temperature, at which the diffusion of implanted As was minimized. It was proposed that the tails of the distributions could be described by the Pearson IV analytical expression. In the case of 38MeV As ion implantation, the straggling deviation, skewness, and kurtosis were 500nm, -1 and -10, respectively.

N.Sieber, G.Otto, H.Syhre: Physica Status Solidi A, 1992, 132[1], 177-82