Ions of As and B were implanted using energies which had been chosen so that their projected ranges coincided, and the implanted material was annealed in Ar gas (950C, 0.5 to 5h). It was found that the activation efficiency of the implanted As atoms decreased with an increase in the implantation dose of B ions, and that the diffusivity of As atoms decreased.

K.Yokota, Y.Okamoto, F.Miyashita, T.Hirao, M.Watanabe, K.Sekine, Y.Ando, K.Matsuda: Journal of Applied Physics, 1994, 75[11], 7247-51