The migration (due to heating with non-coherent light for some seconds) of As from a surface emission source, across a porous layer, and into monocrystalline Si was studied. Stimulated As diffusion under the porous Si layer was attributed to a heat-induced change in the structure of the porous material. Also, vacancy diffusion of As from the porous Si layer into the single crystal was thought to be enhanced by high mechanical stresses. The effect of these stresses upon As diffusion was so great that no difference between the structures of porous layers on p-type and n-type monocrystals was observed.

V.P.Bondarenko, V.E.Borisenko, V.A.Labunov: Fizika i Tekhnika Poluprovodnikov, 1986, 20[5], 929-33. (Soviet Physics - Semiconductors, 1986, 20[5], 586-81)