The question of the diffusion mechanism which controlled the diffusion of As at very high concentrations was examined in terms of a system of reaction-diffusion equations. In particular, the role of the solubility limit was investigated because it represented a threshold value at which some of the quasi-chemical reactions which were involved abruptly changed their nature. The corresponding solutions made it possible to calculate the concentration profiles for both electrically active and inactive impurities as a function of time and pre-deposition. The formation of a plateau of electrically active dopants was considered in detail, together with the distribution of electrically inactive precipitates in the neighborhood of the surface.

E.Antoncik: Applied Physics A, 1994, 58[2], 117-23