An analytical model was presented for the non-linear evolution of the diffusion profile of implanted As. Particular emphasis was placed on the study of the front region of the diffusing impurity profile, where the concentration fell steeply and previously given approximate investigations failed to apply. In particular, explicit expressions were found for the junction depth and the steepness of the profile at the junction.

K.O.Jeppson, D.Anderson, G.Amaratunga, C.P.Please: Journal of the Electrochemical Society, 1987, 134[9], 2316-9