The diffusion of As during rapid thermal annealing, in material which had been doped by ion implantation, was simulated by means of finite difference calculations. The effect of enhanced diffusion via radiation defects, and the effect of the temperature field, were modelled by including thermal diffusion in the diffusion equation. A comparison of the predicted results with experimental data revealed good agreement for diffusion activation energies which were as low as 1.8eV. This suggested that migration occurred via interstitials. The incidence of enhanced diffusion decreased for rapid thermal annealing times of more than 10s.

L.N.Aleksandrov, T.V.Bondareva: Physica Status Solidi A, 1991, 125[2], K71-5