A simplified model was presented for the treatment of dopant diffusion in the presence of non-equilibrium point defect concentrations. The dopant flux was expressed in terms of an effective diffusivity, and took account of the various couplings which arose from the presence of defect gradients. The point defect concentrations were calculated by resolving the corresponding continuity equations. It was found that the model permitted the fast and accurate simulated diffusion of As.

D.Mathiot, S.Martin: Journal of Applied Physics, 1991, 70[6], 3071-80