The enhanced diffusion of implanted As impurities during thermal annealing can be explained in terms of a system of reaction-diffusion equations. It was shown that, for high doses, the local solubility limit could appreciably affect the reactions between the defects which were involved, and thus markedly change the effective diffusion of As donors. A similar effect could be brought about by the presence of pre-doped donors or acceptors, which could also significantly accelerate or retard the effective diffusion of As implants. An explanation was here proposed for some precipitate clustering processes during rapid or slow cooling. It was found that some apparently contradictory experimental results were compatible with the present model.

E.Antoncik: Applied Physics A, 1993, 56[4], 291-8