A model was developed in order to describe, in terms of an effective diffusivity, the implantation-enhanced diffusivity of impurity atoms via a dual vacancy-interstitial mechanism. The model included the mechanisms of vacancy-interstitial pair generation by high-dose impurity implantation, which produced dopant diffusion enhancement, and a so-called transient activation mechanism for dopants in the initial stages of the annealing process.

H.R.Soleimani: Journal of the Electrochemical Society, 1992, 139[11], 3275-84