The laser crystallization mechanism of hydrogenated amorphous material, and the diffusion behavior of implanted impurities in crystallized films, were studied. A new region of liquid-phase laser crystallization was found at low scan velocities. In order to investigate the diffusion mechanisms, various regions were implanted with 80keV As+ ions to a dose of 5 x 1015/cm2 and then subjected to rapid thermal annealing. Spreading resistance measurements and secondary ion mass spectroscopy showed that diffusion in grains and along grain boundaries occurred in all 3 regions. In addition, diffusion along defects occurred in the optical damage zone. This was the fastest of the 3 routes.

Q.Gu, X.M.Bao: Physica Status Solidi A, 1988, 108[1], 81-7