Doping of molten material with As was carried out by using tertiarybutylarsine and an ArF excimer laser. The As atoms diffused from a limited source at the surface, and the depth profiles of the As concentration could be accurately described by a simple Gaussian distribution. The diffusion coefficient of As in the Si melt was found experimentally to be about 0.00014cm2/s.

S.Chichibu, T.Nii, T.Akane, S.Matsumoto: Materials Science Forum, 1993, 117-118, 243-8