The diffusion coefficient of Au, which had been implanted into chemical vapor deposited amorphous material, was measured at temperatures ranging from 400 to 800C by using Rutherford back-scattering spectrometry. Within this temperature range, the diffusion coefficient varied between 10-15 and 10-10cm2/s (table 7), with an activation energy of 1.5eV. The diffusion coefficient in this material correlated well with diffusion in ion-implanted amorphous material and with high-temperature diffusion in highly-dislocated crystals.

L.Calcagno, S.U.Campisano, S.Coffa: Journal of Applied Physics, 1989, 66[4], 1874-6

 

 

 

Table 7

Diffusivity of Au in Amorphous Si

 

T (C)

D (cm2/s)

800

4.5 x 10-11

695

5.8 x 10-12

595

1.0 x 10-12

495

5.4 x 10-14

395

2.2 x 10-15