Artificial multi-layers of amorphous Si, and amorphous Si which contained 0.7at%Au, were prepared by ion beam sputtering. The repeat lengths were between 4.4 and 4.8nm. The change in the intensity of the first-order X-ray diffraction peak, that was due to composition modulation, was monitored as a function of annealing time. It was found that the diffusivity data at temperatures ranging from 200 to 260C (table 9) exhibited an Arrhenius behavior, with an activation energy of about 1.3eV.

E.Nygren, B.Park, L.M.Goldman, F.Spaepen: Applied Physics Letters, 1990, 56[21], 2094-6

 

 

 

Table 9

Diffusion of Au in Amorphous Si Multi-Layers

 

Repeat Length (nm)

T (C)

Diffusion Length (nm)

D (cm2/s)

4.8

200

0.23

6.0 x 10-20

4.8

200

0.32

2.5 x 10-20

4.7

220

0.34

3.9 x 10-19

4.7

220

0.44

6.3 x 10-20

4.7

220

0.46

3.0 x 10-21

4.7

240

0.39

1.7 x 10-18

4.7

240

0.52

1.8 x 10-19

4.5

250

0.37

2.3 x 10-18

4.5

250

0.42

4.5 x 10-19

4.4

260

0.35

4.0 x 10-18

4.4

260

0.39

2.8 x 10-19

4.4

260

0.50

4.6 x 10-20

4.6

260

0.31

3.2 x 10-18

4.6

260

0.43

5.9 x 10-19

4.6

260

0.49

5.7 x 10-20

4.6

260

0.51

1.7 x 10-20