The diffusion profiles of Au in P-doped regions were measured. It was found that, due to the gettering effect of P, the Au concentration was considerably lower than in control wafers without P. A model was developed which took account of Au-P pairing and of self-interstitial injection from the P regions, and was used to simulate the measured Au profiles.

H.Zimmermann: Materials Science Forum, 1994, 143-147, 1647-52