It was found that the study of Au diffusion permitted the separate observation of Si self-interstitials and vacancies. The diffusion of Au in samples of float-zone material was governed by the kick-out mechanism at temperatures above 800C. The use of numerical simulation furnished a consistent set of parameters which described the diffusion of Au at temperatures ranging from 800 to 1100C. The generation or recombination of self-interstitials and vacancies was ineffective; at least below 850C.

H.Zimmermann, H.Ryssel: Applied Physics A, 1992, 55[2], 121-34