The carrier concentration profiles in low-O (float-zone) lightly-doped p-type material after Au diffusion were found to be a function of the heat treatment which was given to the crystal before Au deposition. The anomalous carrier concentration profiles were explained in terms of vacancy diffusion, and clusters of excess vacancies which were retained during crystal growth.

T.K.Monson, J.A.Van Vechten, Q.S.Zhang: Applied Physics Letters, 1995, 66[7], 854-6