The diffusion and gettering of Au to defects which were introduced by H implantation were studied in (100) wafers of Czochralski material that had first been implanted with 50 and/or 100keV H ions. The damaged layers were then annealed at 850C in order to drive the H out and leave a band of well-faceted cavities that were close to the original projected range. A known amount of Au was introduced, by ion implantation, into the near-surface region. The Au profiles were determined by using Rutherford back-scattering spectrometry and channelling, and the microstructure was studied by means of cross-sectional transmission electron microscopy. The gettering of Au to cavities, and the movement of Au from one cavity to another, were studied as a function of time and temperature. The Au concentration at cavities was found to be strongly dependent upon the annealing time. The movement of Au from one set of cavities to another was found to be markedly affected by the interplay between Au diffusion and solubility, and the availability of strongly reactive bonding sites at cavity walls.

J.Wong-Leung, J.S.Williams, E.Nygren: Nuclear Instruments and Methods in Physics Research B, 1995, 106[1-4], 424-8