The diffusion of Au, out of a film which had been deposited onto a Si wafer, was studied during ion bombardment of the back of the wafer. The ions (100keV Ne+) produced a displacement of the Au atoms from normal sites, and prevented the diffusion of Au away from the surface and into the interior of the sample. A similar effect was found during the excitation of an acoustic wave in the crystal. It was suggested that the phenomenon which was observed during bombardment arose from elastic waves which were created as the ions were stopped.

I.V.Antonova, S.S.Shaimeev: Fizika i Tekhnika Poluprovodnikov, 1995, 29[1], 3-8 (Semiconductors, 1995, 29[1], 1-3)